Shockley, Bardeen and Brattain – The Birth of the Transistor – Trans-Resistance – Silicon Valley.


Today, October 3rd marks the anniversary of the second patent of the transistor. The Three-Electrode Circuit Element Utilizing Semiconductor Materials was the second patent issued to Bardeen and Brattan. U.S. Patent No. 2524053 and Schockley. Six years later all three, William B. Schockley, John Bardeen and Walter H. Brattain would share the Nobel Prize in Physics in 1956.

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